FJNS4201RBU
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Frequency - Transition:
200 MHz
Mounting Type:
Through Hole
Package:
Bulk
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
TO-92S
Resistor - Base (R1):
4.7 KOhms
Mfr:
Onsemi
Resistor - Emitter Base (R2):
4.7 KOhms
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
300 MW
Package / Case:
TO-226-3, TO-92-3 Short Body
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 10mA, 5V
Base Product Number:
FJNS42
Introduction
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92S
Send RFQ
Stock:
In Stock
MOQ: