RN1101MFV,L3XHF(CT
Description:
AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Category:
TI Integrated Circuit
In-stock:
In Stock
Payment Method:
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Shipping Method:
LCL, AIR, FCL, Express
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
Automotive, AEC-Q101
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
VESM
Resistor - Base (R1):
4.7 KOhms
Mfr:
Toshiba Semiconductor And Storage
Resistor - Emitter Base (R2):
4.7 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
150 MW
Package / Case:
SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Base Product Number:
RN1101
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
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Stock:
In Stock
MOQ: