UNR51AVG0L
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
80 MA
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Frequency - Transition:
80 MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1.5mA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
SMini3-F2
Resistor - Base (R1):
2.2 KOhms
Mfr:
Panasonic Electronic Components
Resistor - Emitter Base (R2):
2.2 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
150 MW
Package / Case:
SC-85
DC Current Gain (hFE) (Min) @ Ic, Vce:
6 @ 5mA, 10V
Base Product Number:
UNR51
Introduction
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 80 mA 80 MHz 150 mW Surface Mount SMini3-F2
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Stock:
In Stock
MOQ: