UNR421F00A
Description:
TRANS PREBIAS NPN 300MW NS-B1
Category:
TI Integrated Circuit
In-stock:
In Stock
Payment Method:
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Shipping Method:
LCL, AIR, FCL, Express
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Obsolete
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
150 MHz
Mounting Type:
Through Hole
Package:
Cut Tape (CT)
Tape & Box (TB)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
NS-B1
Resistor - Base (R1):
4.7 KOhms
Mfr:
Panasonic Electronic Components
Resistor - Emitter Base (R2):
10 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
300 MW
Package / Case:
3-SIP
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 10V
Base Product Number:
UNR421
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 300 mW Through Hole NS-B1
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Stock:
In Stock
MOQ: