FJN3313RTA
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Obsolete
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
250 MHz
Mounting Type:
Through Hole
Package:
Tape & Box (TB)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
TO-92-3
Resistor - Base (R1):
2.2 KOhms
Mfr:
Onsemi
Resistor - Emitter Base (R2):
47 KOhms
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
300 MW
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V
Base Product Number:
FJN331
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3
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Stock:
In Stock
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