RN2425(TE85L,F)
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
800 MA
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Frequency - Transition:
200 MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
S-Mini
Mfr:
Toshiba Semiconductor And Storage
Resistor - Emitter Base (R2):
10 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
200 MW
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
90 @ 100mA, 1V
Base Product Number:
RN2425
Introduction
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 800 mA 200 MHz 200 mW Surface Mount S-Mini
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Stock:
In Stock
MOQ: