NSBC115TF3T5G
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
SOT-1123
Resistor - Base (R1):
100 KOhms
Mfr:
Onsemi
Current - Collector Cutoff (Max):
500nA
Power - Max:
254 MW
Package / Case:
SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 5mA, 10V
Base Product Number:
NSBC115
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 254 mW Surface Mount SOT-1123
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Stock:
In Stock
MOQ: