RN2305(TE85L,F)
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Frequency - Transition:
200 MHz
Mounting Type:
Surface Mount
Package:
Cut Tape (CT)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
SC-70
Resistor - Base (R1):
2.2 KOhms
Mfr:
Toshiba Semiconductor And Storage
Resistor - Emitter Base (R2):
47 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
100 MW
Package / Case:
SC-70, SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Base Product Number:
RN2305
Introduction
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
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In Stock
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