DTD513ZETL
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
500 MA
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
260 MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
12 V
Supplier Device Package:
EMT3
Resistor - Base (R1):
1 KOhms
Mfr:
Rohm Semiconductor
Resistor - Emitter Base (R2):
10 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
150 MW
Package / Case:
SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce:
140 @ 100mA, 2V
Base Product Number:
DTD513
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 12 V 500 mA 260 MHz 150 mW Surface Mount EMT3
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Stock:
In Stock
MOQ: