PBRN113ZS,126
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
800 MA
Product Status:
Obsolete
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Through Hole
Package:
Tape & Box (TB)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
1.15V @ 8mA, 800mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Supplier Device Package:
TO-92-3
Resistor - Base (R1):
1 KOhms
Mfr:
NXP USA Inc.
Resistor - Emitter Base (R2):
10 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
700 MW
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
500 @ 300mA, 5V
Base Product Number:
PBRN113
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 800 mA 700 mW Through Hole TO-92-3
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Stock:
In Stock
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