PDTC123ES,126
Description:
TRANS PREBIAS NPN 500MW TO92-3
Category:
TI Integrated Circuit
In-stock:
In Stock
Payment Method:
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Shipping Method:
LCL, AIR, FCL, Express
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Obsolete
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Through Hole
Package:
Tape & Box (TB)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
TO-92-3
Resistor - Base (R1):
2.2 KOhms
Mfr:
NXP USA Inc.
Resistor - Emitter Base (R2):
2.2 KOhms
Current - Collector Cutoff (Max):
1µA
Power - Max:
500 MW
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 20mA, 5V
Base Product Number:
PDTC123
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3
Send RFQ
Stock:
In Stock
MOQ: