UNRF2A100A
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
80 MA
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
150 MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
ML3-N2
Resistor - Base (R1):
10 KOhms
Mfr:
Panasonic Electronic Components
Resistor - Emitter Base (R2):
10 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
100 MW
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 10V
Base Product Number:
UNRF2A
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 80 mA 150 MHz 100 mW Surface Mount ML3-N2
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Stock:
In Stock
MOQ: