DDTB114EC-7-F
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
500 MA
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Frequency - Transition:
200 MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
SOT-23-3
Resistor - Base (R1):
10 KOhms
Mfr:
Diodes Incorporated
Resistor - Emitter Base (R2):
10 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
200 MW
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
56 @ 50mA, 5V
Base Product Number:
DDTB114
Introduction
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SOT-23-3
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In Stock
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