NSV9435T1G
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
3 A
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Mounting Type:
Surface Mount
Frequency - Transition:
110 MHz
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
550mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max):
30 V
Supplier Device Package:
SOT-223 (TO-261)
Resistor - Base (R1):
10 KOhms
Mfr:
Onsemi
Current - Collector Cutoff (Max):
-
Power - Max:
720 MW
Package / Case:
TO-261-4, TO-261AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
125 @ 800mA, 1V
Base Product Number:
NSV9435
Introduction
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30 V 3 A 110 MHz 720 mW Surface Mount SOT-223 (TO-261)
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Stock:
In Stock
MOQ: