PDTD113ZT,215
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
500 MA
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
TO-236AB
Resistor - Base (R1):
1 KOhms
Mfr:
Nexperia USA Inc.
Resistor - Emitter Base (R2):
10 KOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
250 MW
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 5V
Base Product Number:
PDTD113
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 250 mW Surface Mount TO-236AB
Send RFQ
Stock:
In Stock
MOQ: