RN1110,LF(CT
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Frequency - Transition:
250 MHz
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
SSM
Resistor - Base (R1):
4.7 KOhms
Mfr:
Toshiba Semiconductor And Storage
Current - Collector Cutoff (Max):
100nA (ICBO)
Power - Max:
100 MW
Package / Case:
SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Base Product Number:
RN1110
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
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Stock:
In Stock
MOQ: